CAMECA LEAP 5000

Metals and Advance Materials Research

Analyse materials in 3D with atomic resolution. Data can be used to correlate properties (eg strength, heat transfer, irradiation damage, carrier lifetime) with nanostructural factors. The mass resolution is high enough to differentiate elements from their isotopes.

Compositional Analysis

With CAMECA’s cluster analysis algorithms you can calculate elemental concentrations within precipitates and clusters. These can be as small as 10 atoms across. You can define isoconcentration levels to limit analysis to specified boundaries.

Example: 3D Microstructural Characterisation of Precipitation in a Ferritic Superalloy

Example: Grain Boundaries in NdFeB alloy

Combining 3D Atom Probe data with t-EBSD:

Semiconductor Devices

3D Quantitative Metrology

Acquire useful information for the design, quality control and failure analysis of next-generation electronic devices, involving new materials (eg SiGe, doped nickel silicides, high-k dielectrics) and new 3D transistor geometries (eg finFETs).

Analyse Device Interfaces

With the CAMECA LEAP microscope you can characterise buried interfaces in 3D. For example, you can characterise local and interface composition to develop and ramp next generation device structures such as finFETs, as well as materials such as high-k dielectrics, contacts and high mobility channels. APT delivers 3D interface measurements not possible with other analytical techniques.

LEAP 5000 complements other methods such as TEM and SIMS, providing 3D compositional characterisation with nanoscale resolution.

Application Notes

These application notes are available to download from CAMECA:

• Correlative analysis – Carbon segregation with LEAP & STEM
• Grain boundary analysis – Analysis of Ni-based Super Alloy 600
• Grain boundary analysis – Analysis of Ultrafine Grained Light Alloys
• Nuclear – Nanoscale features providing radiation damage resistance
• Geology – 4.4 billion year old zircon
• Semiconductors – 3D analysis of a 28nm node S/D region
• LED device engineering – A case study in competitive analysis
• Optical fibres – LEAP analysis of dielectric nanoparticles
• Fuel cells – APT of perovskite materials
• Solar cells – Characterisation of buried interfaces in CIGSSe
• 3D FinFET – Sample prep & 3D analysis of a 14 nm Device
• Biological apatites – Interfaces and interphases in tooth enamel
• Synergistic t-EBSD/TDK & APT Grain Boundary Analysis
• Nanocluster Analysis – APT for Nuclear Structural Materials
• Correlative Grain Boundary Characterisation in the Local Electrode Atom Probe
• Optoelectronics: Dopant Distribution in ALD-grown ZnO
• Magnetic Thin Films for storage, memory & spintronics applications
• Paleoclimatology – Organic Matrices in Biogenic Carbonates
• Nanolaminates – Phase stability in Cu/Nb multilayered films
• APT-STEM Correlative Imaging for Enhanced 3D Reconstruction

The LEAP 5000 platform comes in three configurations:

Automation Packages

Automation packages are available for collecting data from large numbers of samples, and improving data quality and yield. Details are available in a brochure from CAMECA – contact us for quotes.