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Posts Tagged ‘semiconductors’

Semiconductor wafer

Characterising CMP Pads with Nanoindentation

How to use dynamic nanoindentation characterise CMP pads. In this example, the Bruker Hysitron TS 77 Select was employed to quantitatively measure the viscoelastic properties of a hard pad.

This is a robust, reliable method for examining CMP pad surface quality and processes.

Gatan Continuum K3 Stela

Energy-Filtered 4D STEM with the Gatan GIF Continuum K3 (incorporating Stela)

A new fully-integrated system from Gatan and DECTRIS provides low-voltage capabilities for electron counting on EELS, EFTEM and energy-filtered 4D STEM over the entire 30 – 300 kV voltage range.

UWBG Semiconductor Defects

Analysing Ultra-Wide Bandgap (UWBG) Semiconductors with Cathodoluminescence (CL)

Map defect distribution and variations for process development of materials for electronic / optoelectronic devices. CL is ideal for materials not suitable for photoluminescence spectroscopy.

SiGE Semiconductor Characterisation

A New Method for Characterising Nanometre-Sized Semiconductor Structures

Self-focusing SIMS is a new technique for measuring the composition of semiconductors and SiGE devices. It’s ten times faster than studying nanometre-scale features directly with methods such as TEM or APT.

MicroLED Array Emission Patterns

Using SEM-based Cathodoluminescence to Study Light Emission at Nanoscale Spatial Resolution

How cathodoluminescence can be used to study the emission patterns of nitride semiconductor micropillars for microLEDs in displays, including wearable devices.

Silicon Wafer Defects

Characterising Semiconductors with Raman Spectroscopy

How Raman spectroscopy can be used to characterise semiconductor materials. Measure defects in SiC, crystal quality, stress/strain, homogeneity and more.

Automated Cross-Sections with the Gatan PECS II

Automated Cross-Sections, Polishing and Delayering for SEM / Optical Microscopy

Prepare high quality samples for SEM, EDS, EBSD, cathodoluminescence, EBIC and more with the Gatan PECS II broad argon beam system.

Analysing Semiconductors with Nanoscale IR Spectroscopy

Characterise Semiconductor Materials with Nanoscale IR

How nanoscale infrared spectroscopy can be used to measure semiconductor materials in defect and contamination analysis, and fabrication.

XRD Reciprocal Space Mapping

Large Area Reciprocal Space Mapping of Thin Films with XRD

Characterise thin films with large area reciprocal space mapping. With the Bruker EIGER2 R 500K XRD detector you can map large areas in a realistic timeframe, collecting multiple substrate and film reflections and accurate peak intensities. Blue Scientific is the official distributor for Bruker XRD in Norway, Sweden, Denmark, Finland and Iceland. For more information […]

Silicon Wafer Contamination

Identifying Contaminants on Semiconductors with Nanoscale IR Spectroscopy

Unambiguously identify organic contamination on silicon wafers and micro-electronics with a AFM-IR technique, using the Bruker Anasys nanoIR3.